The BioFET-SIM Help Page
Instructions:
- Select semiconductor or define custom material
- Adjust carrier concentration or screening length (values are calculated when typing)
- Transfer obtained values to interface
Example material properties
| Material |
m* |
ε1 |
Ref. |
| Silicon n-type |
0.98 |
12.0 |
(1) |
| Silicon p-type |
0.54 |
12.0 |
(1) |
| Indium oxide intrinsic n-type |
0.35 |
9.0 |
(2) |
| Indium Arsenide in inversion layer n-type |
0.026 |
20.0 |
(1) |
Semiconductor characteristics
Recommended device input values
| Property |
Recommended value |
|
| Nanowire length[nm] |
2000.0 |
|
| Radius[nm] |
10.0 |
|
| Oxide Layer thickness[nm] |
2.0 |
|
| Charge carrier density[m-3] |
1.0E24 |
|
| Solvent permittivity[ε0] |
78.0 |
|
(1) Yacobi, B. G. Semiconductors Materials An Introduction to Basic Principles; Microdevices; Kluver Academic Publisher, New York, 2003; p 54
(2) Kostlin, H.; Jost, R.; Lems, W. Phys. Status Solidi A 1975, 29, 87-93